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| GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit: mm * * * * FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25 s (typ.) (IC = 40 A) FRD : trr = 0.7 s (typ.) (di/dt = -20 A/s) Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A) Absolute Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IECF IECPF PC Tj Tstg Rating 1500 25 40 80 30 80 200 150 -55~150 Unit V V A A W C C JEDEC JEITA TOSHIBA 2-21F2C Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range Weight: 9.75 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Marking Part No. (or abbreviation code) TOSHIBA Gate GT40T301 Lot No. JAPAN Emitter A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT40T301 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Emitter-collector forward voltage Reverse recovery time Thermal resistance Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VECF trr Rth (j-c) 15 51 15 V 0 -15 V IECF = 30 A, VGE = 0 IECF = 30 A, VGE = 0, di/dt = -20 A/s IGBT Diode Test Condition VGE = 25 V, VCE = 0 VCE = 1500 V, VGE = 0 IC = 40 mA, VCE = 5 V IC = 40 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Min 4.0 Typ. 3.7 2900 0.40 0.45 0.23 0.6 1.9 0.7 Max 500 1.0 7.0 5.0 Unit nA mA V V pF 0.40 s 600 V 2.5 3.0 0.625 1.25 V s C/W 2 2006-11-01 GT40T301 IC - VCE 100 25 80 20 15 10 Common emitter VCE - VGE VCE (V) 12 Tc = -40C 8 60 6 20 4 80 40 Collector current IC (A) 60 40 10 Collector-emitter voltage 20 VGE = 8 V 0 0 2 4 6 8 10 2 IC = 10 A 0 0 4 8 12 16 20 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE - VGE 10 Common emitter 10 Tc = 25C 8 VCE - VGE VCE (V) VCE (V) 8 Collector-emitter voltage 6 60 4 40 20 IC = 10 A Collector-emitter voltage 80 6 60 40 4 20 2 Common emitter Tc = 125C 0 0 80 2 IC = 10 A 0 0 4 8 12 16 20 4 8 12 16 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 100 Common emitter 80 10 VCE (sat) - Tc Common emitter Collector-emitter saturation voltage VCE (sat) (V) VCE = 5 V VGE = 15 V 8 Collector current IC (A) 60 6 80 60 40 25 20 Tc = 125C -40 0 0 4 8 12 16 20 4 40 20 2 IC = 10 A 0 -80 -40 0 40 80 120 160 Gate-emitter voltage VGE (V) Case temperature Tc (C) 3 2006-11-01 GT40T301 VCE, VGE - QG 10 Switching time - RG Common emitter RL = 7.5 Tc = 25C Common emitter VCC = 600 V IC = 40 A VGG = 15 V Tc = 25C toff ton tr Collector-emitter voltage VCE (x10 V) Gate-emitter voltage VGE (V) Switching time (s) 30 5 3 20 1 0.5 0.3 10 200 300 tf VCE = 100 V 0 0 40 80 120 160 200 240 280 0.1 1 3 5 10 30 50 100 300 500 1000 Gate charge QG (nC) Gate resistance RG () Switching time - IC 10 5 3 Common emitter VCC = 600 V RG = 51 VGG = 15 V Tc = 25C toff ton tr tf 10000 5000 3000 C - VCE Cies Switching time (s) (pF) Capacitance C 1000 500 300 Coes 100 50 30 10 5 3 1 1 Common emitter VGE = 0 V f = 1 MHz Tc = 25C Cres 1 0.5 0.3 0.1 0.05 0.03 0.01 0 10 20 30 40 50 3 5 10 30 50 100 Collector current IC (A) Collector-emitter voltage VCE (V) Safe operating area 300 IC max (pulsed)* 200 10 ms* 1 ms* 10 s* IC max (continuous) 100 s* 100 Reverse bias SOA (A) 100 50 30 Collector current IC Collector current IC (A) 30 10 Tj < 125C = VGE = 15 V RG = 51 3 10 10 5 DC operation 3 *: Single nonrepetitive pulse Tc = 25C 1 Curves must be derated linearly with increase in 0.5 temperature. 0.3 1 3 10 30 100 300 1000 3000 30 100 300 1000 3000 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 4 2006-11-01 GT40T301 10 1 Rth (t) - tw 100 IECF - VECF Common collector Emitter-collector forward current IECF (A) Transient thermal impedance Rth (t) (C/W) 10 0 Diode IGBT 80 60 Tc = 40C 25 10-1 40 125 20 10-2 10-3 10-5 Tc = 25C 10-4 10-3 10-2 10-1 10 0 10 1 10 2 0 0 1 2 3 4 5 Pulse width tw (s) Emitter-collector forward voltage VECF (V) Irr, trr - IECF 2.5 20 1.0 Common collector 16 100 Irr, trr - di/dt Irr (A) Common collector 80 IECF = 30 A Tc = 25C Irr (A) (s) 2.0 (s) di/dt = -20 A/s Tc = 25C 0.8 Peak reverse recovery current 1.5 12 Irr 8 trr 4 0.6 Peak reverse recovery current trr Reverse recovery time Reverse recovery time trr 60 trr 40 1.0 0.4 0.5 0.2 20 Irr 0 0 0 20 40 60 80 100 0 0 0 40 80 120 160 200 240 Emitter-collector forward current IECF (A) di/dt (A/s) 5 2006-11-01 GT40T301 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-01 |
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